ThuliumV1, Main, Exploration, bibRecord, 001370

Near-infrared emissions and quantum efficiencies in Tm3+ -doped heavy metal gallate glasses for S-and U-band amplifiers and 1.8 μm infrared laser

Identifieur interne : 001370 ( Main/Exploration ); précédent : 001369; suivant : 001371

Near-infrared emissions and quantum efficiencies in Tm3+ -doped heavy metal gallate glasses for S-and U-band amplifiers and 1.8 μm infrared laser

Auteurs : H. Lin [République populaire de Chine] ; X. Y. Wang [République populaire de Chine] ; C. M. Li [République populaire de Chine] ; H. X. Yang [République populaire de Chine] ; E. Y. B. Pun [Hong Kong] ; S. Tanabe [Japon]

Source :

Journal of luminescence [ 0022-2313 ] ; 2008.

RBID : Pascal:07-0446618

Descripteurs français

Pascal (Inist)
- Rayonnement IR proche, Rendement quantique, Dopage, Addition thulium, Largeur raie, Photoluminescence, Concentration impureté, Relaxation croisée, Spectre excitation, Transfert radiatif, Transfert énergie, Codopage, Addition erbium, Gallate, Verre, Matériau optique.
Wicri :
- topic : Dopage, Verre.

English descriptors

KwdEn :
- Codoping, Cross relaxation, Doping, Energy transfer, Erbium additions, Excitation spectrum, Gallates, Glass, Impurity density, Line widths, Near infrared radiation, Optical materials, Photoluminescence, Quantum yield, Radiative transfer, Thulium additions.

Abstract

Intense 1.8 μm and efficient 1.48 μm infrared emissions have been recorded in Tm³⁺ -doped alkali-barium-bismuth-gallate (LKBBG) glasses with low phonon energies under the excitation of 792 nm diode laser. The maximum emission cross-sections for 1.8 and 1.48 μm emission bands are derived to be 6.26 x 10^-21 and 3.34 x 10^-21 cm², respectively, and the peak values are much higher than those in Tm³⁺ -doped ZBLAN glass. In low-concentration doping, the full-widths at half-maximum (FWHMs) of the two emission bands are 223 and 122 nm, and the quantum efficiencies of the ³F₄ and ³H₄ levels are proved to be ∼100% and 86%, respectively. When the doping concentration increases to 1 wt%, the quantum efficiency of the ³H₄ level is reduced to 60% due to the cross-relaxation processes in high-concentration doping. Efficient 1.8 μm infrared emission in Er³⁺/Tm³⁺-codoped LKBBG glass has also been achieved under the excitation of 970 nm diode laser, and the probability and the efficiency of non-radiative energy transfer from Er³⁺ to Tm³⁺ are as high as 354 s^-1 and 58.4%, respectively. Efficient and broad 1.8 and 1.48 μm infrared emission bands indicate that Tm³⁺ -doped LKBBG glasses are suitable materials in developing S- and U-band amplifiers and 1.8 μm infrared laser.

Affiliations:

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Le document en format XML

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 -doped heavy metal gallate glasses for S-and U-band amplifiers and 1.8 μm infrared laser</title>
<author><name sortKey="Lin, H" sort="Lin, H" uniqKey="Lin H" first="H." last="Lin">H. Lin</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Chemical Engineering and Materials, Dalian Institute of Light Industry</s1>
<s2>Dalian 116034</s2>
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<country>République populaire de Chine</country>
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<author><name sortKey="Wang, X Y" sort="Wang, X Y" uniqKey="Wang X" first="X. Y." last="Wang">X. Y. Wang</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Chemical Engineering and Materials, Dalian Institute of Light Industry</s1>
<s2>Dalian 116034</s2>
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<author><name sortKey="Li, C M" sort="Li, C M" uniqKey="Li C" first="C. M." last="Li">C. M. Li</name>
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<author><name sortKey="Yang, H X" sort="Yang, H X" uniqKey="Yang H" first="H. X." last="Yang">H. X. Yang</name>
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<author><name sortKey="Pun, E Y B" sort="Pun, E Y B" uniqKey="Pun E" first="E. Y. B." last="Pun">E. Y. B. Pun</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue</s1>
<s2>Kowloon</s2>
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<author><name sortKey="Tanabe, S" sort="Tanabe, S" uniqKey="Tanabe S" first="S." last="Tanabe">S. Tanabe</name>
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<sZ>6 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<placeName><settlement type="city">Kyoto</settlement>
<region type="prefecture">Région du Kansai</region>
</placeName>
<orgName type="university">Université de Kyoto</orgName>
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<sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Near-infrared emissions and quantum efficiencies in Tm<sup>3+</sup>
 -doped heavy metal gallate glasses for S-and U-band amplifiers and 1.8 μm infrared laser</title>
<author><name sortKey="Lin, H" sort="Lin, H" uniqKey="Lin H" first="H." last="Lin">H. Lin</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Chemical Engineering and Materials, Dalian Institute of Light Industry</s1>
<s2>Dalian 116034</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Dalian 116034</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Wang, X Y" sort="Wang, X Y" uniqKey="Wang X" first="X. Y." last="Wang">X. Y. Wang</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Chemical Engineering and Materials, Dalian Institute of Light Industry</s1>
<s2>Dalian 116034</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Dalian 116034</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Li, C M" sort="Li, C M" uniqKey="Li C" first="C. M." last="Li">C. M. Li</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Chemical Engineering and Materials, Dalian Institute of Light Industry</s1>
<s2>Dalian 116034</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Dalian 116034</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Yang, H X" sort="Yang, H X" uniqKey="Yang H" first="H. X." last="Yang">H. X. Yang</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Chemical Engineering and Materials, Dalian Institute of Light Industry</s1>
<s2>Dalian 116034</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>République populaire de Chine</country>
<wicri:noRegion>Dalian 116034</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Pun, E Y B" sort="Pun, E Y B" uniqKey="Pun E" first="E. Y. B." last="Pun">E. Y. B. Pun</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue</s1>
<s2>Kowloon</s2>
<s3>HKG</s3>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Hong Kong</country>
<wicri:noRegion>Kowloon</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Tanabe, S" sort="Tanabe, S" uniqKey="Tanabe S" first="S." last="Tanabe">S. Tanabe</name>
<affiliation wicri:level="4"><inist:fA14 i1="03"><s1>Graduate School of Human and Environmental Studies, Kyoto University</s1>
<s2>Sakyo-ku, Kyoto 606-8501</s2>
<s3>JPN</s3>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<placeName><settlement type="city">Kyoto</settlement>
<region type="prefecture">Région du Kansai</region>
</placeName>
<orgName type="university">Université de Kyoto</orgName>
</affiliation>
</author>
</analytic>
<series><title level="j" type="main">Journal of luminescence</title>
<title level="j" type="abbreviated">J. lumin.</title>
<idno type="ISSN">0022-2313</idno>
<imprint><date when="2008">2008</date>
</imprint>
</series>
</biblStruct>
</sourceDesc>
<seriesStmt><title level="j" type="main">Journal of luminescence</title>
<title level="j" type="abbreviated">J. lumin.</title>
<idno type="ISSN">0022-2313</idno>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Codoping</term>
<term>Cross relaxation</term>
<term>Doping</term>
<term>Energy transfer</term>
<term>Erbium additions</term>
<term>Excitation spectrum</term>
<term>Gallates</term>
<term>Glass</term>
<term>Impurity density</term>
<term>Line widths</term>
<term>Near infrared radiation</term>
<term>Optical materials</term>
<term>Photoluminescence</term>
<term>Quantum yield</term>
<term>Radiative transfer</term>
<term>Thulium additions</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Rayonnement IR proche</term>
<term>Rendement quantique</term>
<term>Dopage</term>
<term>Addition thulium</term>
<term>Largeur raie</term>
<term>Photoluminescence</term>
<term>Concentration impureté</term>
<term>Relaxation croisée</term>
<term>Spectre excitation</term>
<term>Transfert radiatif</term>
<term>Transfert énergie</term>
<term>Codopage</term>
<term>Addition erbium</term>
<term>Gallate</term>
<term>Verre</term>
<term>Matériau optique</term>
</keywords>
<keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Dopage</term>
<term>Verre</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Intense 1.8 μm and efficient 1.48 μm infrared emissions have been recorded in Tm<sup>3+</sup>
 -doped alkali-barium-bismuth-gallate (LKBBG) glasses with low phonon energies under the excitation of 792 nm diode laser. The maximum emission cross-sections for 1.8 and 1.48 μm emission bands are derived to be 6.26 x 10<sup>-21</sup>
 and 3.34 x 10<sup>-21</sup>
 cm<sup>2</sup>
, respectively, and the peak values are much higher than those in Tm<sup>3+</sup>
 -doped ZBLAN glass. In low-concentration doping, the full-widths at half-maximum (FWHMs) of the two emission bands are 223 and 122 nm, and the quantum efficiencies of the <sup>3</sup>
F<sub>4</sub>
 and <sup>3</sup>
H<sub>4</sub>
 levels are proved to be ∼100% and 86%, respectively. When the doping concentration increases to 1 wt%, the quantum efficiency of the <sup>3</sup>
H<sub>4</sub>
 level is reduced to 60% due to the cross-relaxation processes in high-concentration doping. Efficient 1.8 μm infrared emission in Er<sup>3+</sup>
/Tm<sup>3+</sup>
-codoped LKBBG glass has also been achieved under the excitation of 970 nm diode laser, and the probability and the efficiency of non-radiative energy transfer from Er<sup>3+</sup>
 to Tm<sup>3+</sup>
 are as high as 354 s<sup>-1</sup>
 and 58.4%, respectively. Efficient and broad 1.8 and 1.48 μm infrared emission bands indicate that Tm<sup>3+</sup>
 -doped LKBBG glasses are suitable materials in developing S- and U-band amplifiers and 1.8 μm infrared laser.</div>
</front>
</TEI>
<affiliations><list><country><li>Hong Kong</li>
<li>Japon</li>
<li>République populaire de Chine</li>
</country>
<region><li>Région du Kansai</li>
</region>
<settlement><li>Kyoto</li>
</settlement>
<orgName><li>Université de Kyoto</li>
</orgName>
</list>
<tree><country name="République populaire de Chine"><noRegion><name sortKey="Lin, H" sort="Lin, H" uniqKey="Lin H" first="H." last="Lin">H. Lin</name>
</noRegion>
<name sortKey="Li, C M" sort="Li, C M" uniqKey="Li C" first="C. M." last="Li">C. M. Li</name>
<name sortKey="Wang, X Y" sort="Wang, X Y" uniqKey="Wang X" first="X. Y." last="Wang">X. Y. Wang</name>
<name sortKey="Yang, H X" sort="Yang, H X" uniqKey="Yang H" first="H. X." last="Yang">H. X. Yang</name>
</country>
<country name="Hong Kong"><noRegion><name sortKey="Pun, E Y B" sort="Pun, E Y B" uniqKey="Pun E" first="E. Y. B." last="Pun">E. Y. B. Pun</name>
</noRegion>
</country>
<country name="Japon"><region name="Région du Kansai"><name sortKey="Tanabe, S" sort="Tanabe, S" uniqKey="Tanabe S" first="S." last="Tanabe">S. Tanabe</name>
</region>
</country>
</tree>
</affiliations>
</record>

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Near-infrared emissions and quantum efficiencies in Tm3+ -doped heavy metal gallate glasses for S-and U-band amplifiers and 1.8 μm infrared laser

Near-infrared emissions and quantum efficiencies in Tm3+ -doped heavy metal gallate glasses for S-and U-band amplifiers and 1.8 μm infrared laser

Source :

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri